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High Hardness Silicon Carbide Mirror High Purity Sic Mirror Si₃N₄

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                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                high hardness silicon carbide mirror, high purity sic mirror, silicon carbide mirror high purity
                              

Feature:	High Temperature Resistance	Sic Purity:	≥98%
Thermal Expansion Coefficient:	4.0-4.5 X 10-6/K	Material:	Silicon Carbide
Hardness:	9.5 Mohs	Dimensional Stability:	Excellent
Maximum Temperature:	1700℃	Density:	3.21 G/cm3
Wear Resistance:	Excellent	Port:	Shanghai
Mechanical Strength:	High	Working Temperature:	1400℃
Thermal Conductivity:	120-200 W/mK	Corrosion Resistance:	Excellent
Bending Strength:	400 MPa

Feature:	High Temperature Resistance
Sic Purity:	≥98%
Thermal Expansion Coefficient:	4.0-4.5 X 10-6/K
Material:	Silicon Carbide
Hardness:	9.5 Mohs
Dimensional Stability:	Excellent
Maximum Temperature:	1700℃
Density:	3.21 G/cm3
Wear Resistance:	Excellent
Port:	Shanghai
Mechanical Strength:	High
Working Temperature:	1400℃
Thermal Conductivity:	120-200 W/mK
Corrosion Resistance:	Excellent
Bending Strength:	400 MPa

High Hardness Silicon Carbide Mirror High Purity Sic Mirror Si₃N₄

High Hardness Silicon Carbide Mirror High Purity Sic Mirror Si₃N₄ 0

Silicon nitride(Si3N4)exceeds many other ceramic materials in thermal shock-resistance.It does not deteriorate at high temperatures;therefore,it is ideal for use in components for automotive engines and gas turbines-including turbocharger rotors,glow plugs for diesel engines,and hot plugs.Further applications of this material are anticipated in a wide range of fields.

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