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Home > Products > Silicon Nitride Ceramics > Silicon Nitride Ceramic Rounded Rectangle Block Guide Sleeves For Wafer Transfer Mechanisms In Semiconductor Manufacturing

Silicon Nitride Ceramic Rounded Rectangle Block Guide Sleeves For Wafer Transfer Mechanisms In Semiconductor Manufacturing

Product Details

Place of Origin: Made In China

Brand Name: Dayoo

Payment & Shipping Terms

Minimum Order Quantity: Negotiable

Price: Negotiable

Delivery Time: Negotiable

Payment Terms: Negotiable

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Highlight:

high hardness silicon carbide nitride

,

oxidation resistance silicon nitride si3n4

,

silicon carbide nitride oxidation resistance

Features:
Wear-resistant/insulation
Density:
3.2 G/cm3
Breakdown Voltage:
20-25 KV/mm
After Warranty Service:
Online Support
Dielectric Strength:
18-20 KV/mm
Voltage:
110-220V
Type:
Heating Element
Fracture Toughness:
7 MPa
Port:
Shanghai
Wattage Density:
2~25W/cm2
Low Thermal Expansion:
Yes
Chemical Resistance:
High
Tensile Strength:
400-600 MPa
Sample:
Nogotiable
Thermal Expansion:
3.4*10(4) ℃
Features:
Wear-resistant/insulation
Density:
3.2 G/cm3
Breakdown Voltage:
20-25 KV/mm
After Warranty Service:
Online Support
Dielectric Strength:
18-20 KV/mm
Voltage:
110-220V
Type:
Heating Element
Fracture Toughness:
7 MPa
Port:
Shanghai
Wattage Density:
2~25W/cm2
Low Thermal Expansion:
Yes
Chemical Resistance:
High
Tensile Strength:
400-600 MPa
Sample:
Nogotiable
Thermal Expansion:
3.4*10(4) ℃
Silicon Nitride Ceramic Rounded Rectangle Block Guide Sleeves For Wafer Transfer Mechanisms In Semiconductor Manufacturing

Silicon Nitride Ceramic Rounded Rectangle Block Guide Sleeves For Wafer Transfer Mechanisms In Semiconductor Manufacturing

Product Overview

This product is a silicon nitride ceramic rounded rectangle block manufactured using gas pressure sintering technology. It features a uniform dark gray appearance with a mirror-like surface finish achieved through precision polishing. The product adopts an ergonomic rounded rectangular design with a high-precision circular through-hole running through the center, and all edges feature smooth radius transitions. This design effectively avoids stress concentration while ensuring safety and reliability during use, maintaining elegant geometric aesthetics.

Primary Applications

• Precision Machinery: Wear-resistant bushings for automated equipment linear guides, rotating connection blocks for robotic arms
• Fluid Control Systems: Corrosion-resistant connectors for chemical pumps and valves, high-purity pipeline connections
• Semiconductor Manufacturing: Guide sleeves for wafer transfer mechanisms, insulation connection posts for vacuum equipment
• Electrical Power: Insulation support components for high-voltage switches, heat dissipation fixing blocks for electrical equipment
• Measuring Instruments: Positioning blocks for precision measurement platforms, adjustment shims for optical instruments

Product Advantages

→ Exceptional Wear Resistance: Wear coefficient <5×10⁻⁸ mm³/N·m, service life exceeds metal materials by 10 times
→ Excellent Mechanical Strength: Compressive strength ≥2200 MPa, flexural strength ≥650 MPa
→ Outstanding Corrosion Resistance: Resists strong acids, alkalis, and organic solvents
→ Superior Insulation Properties: Volume resistivity >10¹⁵ Ω·cm, dielectric strength ≥20 kV/mm
→ Low Thermal Expansion Coefficient: 3.2×10⁻⁶/°C, ensuring dimensional stability in high-temperature environments

Technical Specifications

 
 
Performance Indicator Technical Parameter
Material Composition Si₃N₄ ≥96.5%
Appearance Dark Gray Mirror Polishing
Bulk Density 3.25 g/cm³
Through-Hole Accuracy H6 Grade Tolerance
Corner Radius R1.5±0.1 mm
Surface Roughness Ra ≤ 0.08 μm
Operating Temperature Range -60℃ ~ 1250℃
Thermal Conductivity 26 W/(m·K)

Manufacturing Process

High-purity powder formulation → Uniform binder mixing → Bidirectional mold pressing → Cold isostatic pressing enhancement → Gas pressure sintering → Rough grinding → Corner precision grinding → Through-hole honing → Mirror polishing → Laser inspection

Usage Guidelines

  1. Use specialized installation tools during assembly, avoid direct hammering

  2. Recommended fit clearance: 0.02-0.05 mm

  3. Clean and dry promptly after use in corrosive media

  4. Regularly inspect through-hole inner wall wear, recommended every 2000 operating hours

  5. Avoid contact with specific chemicals like hydrofluoric acid and hot phosphoric acid

Service Commitment

• 24-month product quality guarantee
• Complimentary technical selection and installation guidance
• Support for small-batch trial orders (Minimum Order Quantity: 20 pieces)
• Provision of material test reports and usage certificates
• Establishment of dedicated customer files with lifelong technical consultation

Frequently Asked Questions

Q: What are the special advantages of the rounded corner design?
A: The rounded corner design effectively distributes stress, avoids concentration at sharp edges, and enhances impact resistance

Q: How is the dimensional accuracy guaranteed?
A: Using CNC precision machining, dimensional tolerance reaches ±0.008 mm, corner radius accuracy ±0.05 mm

Q: Is it suitable for high-temperature and high-pressure environments?
A: Particularly suitable for high-temperature and high-pressure conditions, maintaining stable performance at 800°C and 10 MPa

Q: Are special size customizations supported?
A: Custom non-standard sizes supported, maximum processable size 150×100×50 mm, through-hole diameter 3-40 mm

Product Features:
This product employs a unique rounded corner reinforcement design, optimized through finite element analysis to improve impact resistance by 40%. The central through-hole uses special honing technology to ensure mirror-level inner wall smoothness, effectively reducing fluid flow resistance. The material undergoes special heat treatment processes with grain size controlled within 0.5-1.0 μm range, combining high hardness with good toughness, achieving service life more than 5 times longer than traditional materials in harsh working conditions.

 

Silicon Nitride Ceramic Rounded Rectangle Block Guide Sleeves For Wafer Transfer Mechanisms In Semiconductor Manufacturing 0