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Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Product Details

Place of Origin: CN

Brand Name: Dayoo

Payment & Shipping Terms

Minimum Order Quantity: Customized

Price: CNY

Packaging Details: package

Delivery Time: 60 workdays

Supply Ability: Factory

Get Best Price

Product Details

Product Description

Highlight:

High Thermal Conductivity:	Yes	Thermal Shock Resistance:	Good
Maximum Temperature:	1380℃	Bending Strength:	280 MPa
Purity:	98%	Compressive Strength:	> 2 GPa

High Thermal Conductivity:	Yes
Thermal Shock Resistance:	Good
Maximum Temperature:	1380℃
Bending Strength:	280 MPa
Purity:	98%
Compressive Strength:	> 2 GPa

Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier | Precision Hollow SiC Ceramic Support Plate

Product Introduction

This product is a Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier, manufactured from high-purity silicon carbide (SiC) ceramic raw materials. It features an overall diamond outline with multi-layer annular radial hollow structure in the center. Fabricated via atmospheric pressure high-temperature sintering and precision machining, it boasts high density, lightweight structure and excellent thermal conductivity. The hollow design effectively reduces self-weight and improves gas circulation. It serves as a core load-bearing ceramic component for high-temperature process equipment.

Applications

Widely adopted in semiconductor wafer heat treatment, photovoltaic silicon wafer sintering, optical component annealing, vacuum high-temperature furnaces and other equipment. It works as wafer carrier, airflow baffle and high-temperature fixture, supporting workpieces while ensuring uniform airflow and temperature distribution inside furnaces.

Core Advantages

Outstanding High-temperature Resistance: Continuous working temperature up to 1400℃, stable dimension under high temperature.
Balanced Thermal Conductivity & Great Thermal Stability: High thermal conductivity and superior thermal shock resistance, resistant to cracking under repeated heating and cooling cycles.
High Purity & Contamination-free: Low impurity precipitation, preventing contamination on wafers and precision components.
Lightweight Hollow Structure: Reduces weight and optimizes air circulation for faster heating and cooling.

Specification Parameters

表格

Item	Parameter
Material	Pressureless Sintered Silicon Carbide (SiC) Ceramic
Density	≥3.10g/cm³
Bending Strength	≥350MPa
Continuous Operating Temperature	≤1400℃
Dimensional Tolerance	±0.02mm
Porosity	＜0.5%

Production Process

Raw Material Mixing & Granulation → Irregular Shape Dry Press Forming → High-temperature Sintering → Surface Precision Grinding → CNC Hollow Milling → Surface Polishing → Ultrasonic Cleaning → Full Dimensional Inspection → Vacuum Packaging

Instructions for Use

Fully bake the carrier before first use to remove adsorbed impurities.
Handle gently when placing workpieces to avoid impact on edges and corners.
Control heating & cooling rate to minimize severe thermal shock.
Regularly clean sediment inside hollow slots to maintain smooth airflow.

After-sales Service

Customization of hollow patterns and overall dimensions based on drawings or samples, prototype trial service available. All products undergo full inspection before delivery with inspection reports provided. After-sales solution for non-artificial quality defects. Professional technical support for high-temperature working condition selection.

FAQ

Q: What are the advantages of SiC carrier compared with alumina ceramic carrier?

A: Silicon carbide performs better in high-temperature resistance, thermal conductivity and thermal shock resistance, which is more suitable for heat treatment processes with sustained high temperature and frequent thermal cycles.

Q: Can hollow pattern and outer dimension be modified?

A: Yes. Outer profile, hollow layout and plate thickness can be adjusted according to workpiece size.

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Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier | Precision Hollow SiC Ceramic Support Plate

Product Introduction

Applications

Core Advantages

Specification Parameters

Production Process

Instructions for Use

After-sales Service

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